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Elpida Memory, Inc.

USPTO Granted Patents = 1,458

% Expired Patents = 58.0

EPO Patents = 1

Forward Citations = 10,115

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688 inventors (with patents filed for the assignee):

Kazuhiko Kajigaya (90 out of 226 patents)

Hiroki Fujisawa (79 out of 153 patents)

Hiroaki Ikeda (42 out of 127 patents)

4. Yoji Nishio (42 out of 86 patents)

5. Mitsuaki Katagiri (35 out of 63 patents)

6. Riichiro Takemura (34 out of 134 patents)

7. Hiroyuki Ode (34 out of 53 patents)

8. Toru Ishikawa (33 out of 109 patents)

9. Tomonori Sekiguchi (32 out of 123 patents)

10. Kayoko Shibata (30 out of 47 patents)

11. Hanhong Chen (29 out of 77 patents)

12. Seiji Funaba (29 out of 45 patents)

13. Sandra Guy Malhotra (27 out of 113 patents)

14. Yoshinori Matsui (24 out of 87 patents)

15. Wim Deweerd (24 out of 41 patents)

Core Competencies:

Nonvolatile Memory

DRAM Capacitors

High-K Dielectric

Semiconductor Devices

Flash Memory

Electrical Performance

MIM Capacitors

Titanium Oxide

Memory Banks

Stacked Chips

Leakage Current

Chip Fabrication

1,458 patents: Sort by Forward Citations

1. 9508431 - Nonvolatile semiconductor memory device of variable resistive type with reduced variations of forming current after breakdown (2016-11-29),

2. 9465068 - Test method for semiconductor device having stacked plural semiconductor chips (2016-10-11),

3. 9281357 - DRAM MIM capacitor using non-noble electrodes (2016-03-08),

4. 9224878 - High work function, manufacturable top electrode (2015-12-29),

5. 9218878 - Semiconductor device and control method for semiconductor device (2015-12-22),

6. 9178006 - Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications (2015-11-03),

7. 9012298 - Methods for reproducible flash layer deposition (2015-04-21),

8. 8980744 - Inexpensive electrode materials to facilitate rutile phase titanium oxide (2015-03-17),

9. 8975633 - Molybdenum oxide top electrode for DRAM capacitors (2015-03-10),

10. 8975147 - Enhanced work function layer supporting growth of rutile phase titanium oxide (2015-03-10),

11. 8910375 - Mounting apparatus (2014-12-16),

12. 8906812 - [object Object] (2014-12-09),

13. 8900422 - Yttrium and titanium high-K dielectric film (2014-12-02),

14. 8900418 - Yttrium and titanium high-k dielectric films (2014-12-02),

15. 8853049 - Single-sided non-noble metal electrode hybrid MIM stack for DRAM devices (2014-10-07),

Elpida Memory, Inc. is a prominent player in the semiconductor memory industry, headquartered in Tokyo, Japan. The company specializes in the development and manufacturing of advanced memory solutions, particularly focusing on DRAM technology and nonvolatile memory. Elpida's expertise encompasses high-performance semiconductor devices, including MIM capacitors and flash memory, leveraging innovations in materials such as high-K dielectric and titanium oxide to enhance electrical performance. The organization is committed to pushing the boundaries of memory technology to meet the evolving demands of various applications.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Sep 29 2026

Elpida Memory, Inc.

1,458 Patents

#82 in Tokyo

#155 in Japan

#672 in the World

Elpida Memory, Inc.

Forward Citations = 10,115

688 inventors:

Kazuhiko Kajigaya (90 out of 226 patents)

Hiroki Fujisawa (79 out of 153 patents)

Hiroaki Ikeda (42 out of 127 patents)

4. Yoji Nishio (42 out of 86 patents)

5. Mitsuaki Katagiri (35 out of 63 patents)

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