The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Jul. 16, 2013
Applicant:

Elpida Memory, Inc., Tokyo, JP;

Inventor:

Hiroaki Ikeda, Tokyo, JP;

Assignee:

Elpida Memory, Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2014.01); G11C 29/02 (2006.01); G01R 31/28 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2601 (2013.01); G01R 31/2889 (2013.01); G11C 29/025 (2013.01); G01R 31/2884 (2013.01); G11C 2029/5006 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/15311 (2013.01);
Abstract

Disclosed herein is a method for testing a semiconductor device, the method includes: preparing a first semiconductor chip having a first bump electrode and a first driver circuit that drives the first bump electrode, and a second semiconductor chip having a second bump electrode and a second driver circuit that drives the second bump electrode; staking the first and second semiconductor chips so that the first bump electrode and the second bump electrode are electrically connected to each other to form a current path including the first and second bump electrodes; and driving, in a test mode, the current path to a first potential by the first driver circuit while driving the current path to a second potential different from the first potential by the second driver circuit.


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