The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Oct. 31, 2012
Intermolecular, Inc., San Jose, CA (US);
Elpida Memory, Inc., Tokyo, JP;
Hanhong Chen, Milpitas, CA (US);
Wim Y. Deweerd, San Jose, CA (US);
Hiroyuki Ode, Higashihiroshima, JP;
Intermolecular, Inc., San Jose, CA (US);
Elpida Memory, Inc., Tokyo, JP;
Abstract
A metal oxide bilayer second electrode for a MIM DRAM capacitor is formed wherein the layer of the electrode that is in contact with the dielectric layer (i.e. bottom layer) has a desired composition and crystal structure. An example is crystalline MoOif the dielectric layer is TiOin the rutile phase. The other component of the bilayer (i.e. top layer) is a sub-oxide of the same material as the bottom layer. The top layer serves to protect the bottom layer from oxidation during subsequent PMA or other DRAM fabrication steps by reacting with any oxygen species before they can reach the bottom layer of the bilayer second electrode.