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Higashihiroshima, Japan

Hiroyuki Ode

USPTO Granted Patents = 53 (Patent Applications = 3)

Average Co-Inventor Count = 2.9

ph-index = 6

Forward Citations = 139(Granted Patents)

Forward Citations (Not Self Cited) = 135(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hiroshima, JP (2013 - 2014)
Tokyo, JP (2009 - 2015)
Higashihiroshima, JP (2013 - 2015)

Company Filing History:

Intermolecular, Inc.

34 out of 1,458

Elpida Memory, Inc.

Ps4 Luxco S.a.r.l.

4. 1 out of 832,961

Other

patents

where one patent can have more than one assignee

Years Active: 2009-2015

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Areas of Expertise:

DRAM Capacitors

ALD Films

Semiconductor Manufacturing

MIM Capacitors

High-k Dielectric

Leakage Current Reduction

Non-Noble Electrodes

Catalytic Layers

Thermal Stability

Flash Layer Deposition

Band Gap Improvement

Electrode Templating

53 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9224878 - High work function, manufacturable top electrode (2015-12-29),

2. 9178010 - Adsorption site blocking method for co-doping ALD films (2015-11-03),

3. 9129850 - Semiconductor device manufacturing method (2015-09-08),

4. 9105646 - Methods for reproducible flash layer deposition (2015-08-11),

5. 9012298 - Methods for reproducible flash layer deposition (2015-04-21),

6. 8975633 - Molybdenum oxide top electrode for DRAM capacitors (2015-03-10),

7. 8912628 - Semiconductor device and method for manufacturing the same (2014-12-16),

8. 8906812 - [object Object] (2014-12-09),

9. 8878269 - Band gap improvement in DRAM capacitors (2014-11-04),

10. 8853049 - Single-sided non-noble metal electrode hybrid MIM stack for DRAM devices (2014-10-07),

11. 8847397 - High work function, manufacturable top electrode (2014-09-30),

12. 8836002 - Method for fabricating a DRAM capacitor (2014-09-16),

13. 8835273 - High temperature ALD process of metal oxide for DRAM applications (2014-09-16),

14. 8829647 - High temperature ALD process for metal oxide for DRAM applications (2014-09-09),

15. 8828836 - Method for fabricating a DRAM capacitor (2014-09-09),

Title: The Innovative Journey of Hiroyuki Ode

Introduction: Hiroyuki Ode is a pioneering inventor hailing from Higashihiroshima, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hiroyuki Ode holds several patents in the realm of robotics and artificial intelligence, with his most recent inventions focusing on advanced human-machine interfaces and autonomous systems.

Career Highlights: Throughout his illustrious career, Hiroyuki Ode has worked tirelessly to push the boundaries of technological advancement. His work has been instrumental in shaping the future of robotics, with a particular emphasis on enhancing the interaction between humans and machines.

Collaborations: Hiroyuki Ode has collaborated with leading research institutions and tech companies to further his innovative projects. His partnerships have led to the development of cutting-edge technologies that have the potential to revolutionize various industries.

Conclusion: In conclusion, Hiroyuki Ode stands as a visionary inventor whose work continues to inspire and drive progress in the field of technology. His dedication to innovation and his relentless pursuit of excellence make him a true trailblazer in the world of robotics and artificial intelligence.

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