The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Jan. 10, 2013
Intermolecular, Inc., San Jose, CA (US);
Elpida Memory, Inc, Tokyo, JP;
Karthik Ramani, Santa Clara, CA (US);
Hanhong Chen, Milpitas, CA (US);
Wim Deweerd, San Jose, CA (US);
Nobumichi Fuchigami, Sunnyvale, CA (US);
Hiroyuki Ode, Higashihiroshima, JP;
Intermolecular, Inc., San Jose, CA (US);
Abstract
A method for fabricating a dynamic random access memory (DRAM) capacitor stack is disclosed wherein the stack includes a first electrode, a dielectric layer, and a second electrode. The first electrode is formed from a conductive binary metal compound and the conductive binary metal compound is annealed in a reducing atmosphere to promote the formation of a desired crystal structure. The binary metal compound may be a metal oxide. Annealing the metal oxide (i.e. molybdenum oxide) in a reducing atmosphere may result in the formation of a first electrode material (i.e. MoO) with a rutile-phase crystal structure. This facilitates the formation of the rutile-phase crystal structure when TiOis used as the dielectric layer. The rutile-phase of TiOhas a higher k value than the other possible crystal structures of TiOresulting in improved performance of the DRAM capacitor.