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Unoh Kwon

This inventor holds 94 USPTO granted patents and 14 published patent applications, primarily in Field Effect Transistors (CPC class H01L21-823842). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Globalfoundries U.S. 2 LLC. Active years: 2010-2021.

USPTO Granted Patents = 94 (Patent Applications = 14)

% Patents Active = 59.6

Average Co-Inventor Count = 4.4

ph-index = 12

Forward Citations = 856(Granted Patents)

Forward Citations (Not Self Cited) = 802(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Hopewell Junction, NY (US) (2012 - 2013)
Fishkil, NY (US) (2014)
Fishkill, NY (US) (2010 - 2020)
Clifton Park, NY (US) (2017 - 2021)
Clifton Park, NJ (US) (2021)

Company Filing History:

70 out of 166,325

International Business Machines Corporation

Globalfoundries U.S. 2 LLC

patents

4. 1 out of 5,491

Freescale Semiconductor,inc.

patents

where one patent can have more than one assignee

Years Active: 2010-2021

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Areas of Expertise:

Gate Formation

Tunable Work Function

High K Metal Gate

Field Effect Transistor

Threshold Voltage

Soft Mask Integration

Replacement Metal Gates

CMOS FinFETs

Integrated Circuit

Nanowire Tunnel FETs

Dielectric Material

Dopant Films

94 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11031301 - Gate formation scheme for n-type and p-type transistors having separately tuned threshold voltages (2021-06-08),

2. 10985075 - Gate formation scheme for n-type and p-type transistors having separately tuned threshold voltages (2021-04-20),

3. 10756194 - Shared metal gate stack with tunable work function (2020-08-25),

4. 10395993 - Methods and structure to form high K metal gate stack with single work-function metal (2019-08-27),

5. 10361132 - Structures with thinned dielectric material (2019-07-23),

6. 10354999 - Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gate (2019-07-16),

7. 10312157 - Field effect transistor stack with tunable work function (2019-06-04),

8. 10249543 - Field effect transistor stack with tunable work function (2019-04-02),

9. 10243055 - Shared metal gate stack with tunable work function (2019-03-26),

10. 10170373 - Methods for making robust replacement metal gates and multi-threshold devices in a soft mask integration scheme (2019-01-01),

11. 10079182 - Field effect transistor gate stack (2018-09-18),

12. 10062618 - Method and structure for formation of replacement metal gate field effect transistors (2018-08-28),

13. 10002937 - Shared metal gate stack with tunable work function (2018-06-19),

14. 9997610 - Gate stack formed with interrupted deposition processes and laser annealing (2018-06-12),

15. 9997361 - Gate stack formed with interrupted deposition processes and laser annealing (2018-06-12),

Certainly! Here is the article about inventor Unoh Kwon:

Title: Unoh Kwon: Innovating Gate Formation for Transistors in Fishkill, NY

Introduction: Unoh Kwon, a prolific inventor based in Fishkill, NY, has left a lasting impact on the field of semiconductor technology with his groundbreaking innovations.

Latest Patents: Unoh Kwon's latest patents revolve around a gate formation scheme for n-type and p-type transistors that allow for separately tuned threshold voltages. These patents introduce a method that involves forming channel fins in both n-type and p-type regions of a substrate, along with a unique work function metal stack that enables precise control over threshold voltages.

Career Highlights: Throughout his career, Unoh Kwon has amassed an impressive total of 94 patents, showcasing his expertise and dedication to pushing the boundaries of semiconductor technology. He has made significant contributions while working at renowned companies such as IBM (International Business Machines Corporation) and Globalfoundries Inc.

Collaborations: Unoh Kwon has collaborated with esteemed colleagues such as Siddarth A Krishnan and Vijay Narayanan, demonstrating his ability to work effectively in a team environment to drive innovation forward.

Conclusion: Unoh Kwon's legacy as an inventor in the semiconductor industry is marked by his ingenuity and technical prowess. His relentless pursuit of excellence continues to shape the future of transistor technology, making him a notable figure in the world of innovations.

Profile summary based on public USPTO records.

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