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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10395993 B1

PDFFull Text
Date of Patent:
Aug. 27, 2019

Filed:

Oct. 04, 2016

Methods and structure to form high k metal gate stack with single work-function metal

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Takashi Ando, Tuckahoe, NY (US);

Balaji Kannan, Fishkill, NY (US);

Siddarth Krishnan, Newark, CA (US);

Unoh Kwon, Fishkill, NY (US);

Shahab Siddiqui, Somers, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorney:

L. Jeffrey Kelly

Primary Examiner:

Shaun M Campbell

Assistant Examiner:

Aneta B Cieslewicz

Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 21/225 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823828 (2013.01); H01L 21/225 (2013.01); H01L 21/28088 (2013.01); H01L 21/28185 (2013.01); H01L 21/28238 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 27/092 (2013.01); H01L 29/42372 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01);
Abstract

A method for forming a replacement metal gate structure sharing a single work function metal for both the N-FET and the P-FET gates. The method oppositely dopes a high-k material of the N-FET and P-FET gate, respectively, using a single lithography step. The doping allows use of a single work function metal which in turn provides more space in the metal gate opening so that a bulk fill material may occupy more volume of the opening resulting in a lower resistance gate.

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