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For the Inventor, By the Inventor

White Plains, NY, United States of America

Shahab Siddiqui

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This inventor holds 52 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Other. Active years: 2003-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shahab Siddiqui. Retrieved from https://idiyas.com/inventor/shahab-siddiqui

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 52 

% Patents Active = 65.4

Average Co-Inventor Count = 4.7

ph-index = 7

Forward Citations = 588(Granted Patents)

Forward Citations (Not Self Cited) = 567(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Wappingers Falls, NY (US) (2003 - 2011)
  • Hopewell Junction, NY (US) (2012)
  • White Plains, NY (US) (2010 - 2017)
  • Cifton Park, NY (US) (2018)
  • Somers, NY (US) (2015 - 2019)
  • Clifton Park, NY (US) (2019 - 2024)

Company Filing History:

goldMedal43 out of 166,325 
 
International Business Machines Corporation
 patents
silverMedal9 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal1 out of 834,453 
Other
 patents
where one patent can have more than one assignee

Years Active: 2003-2024

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Areas of Expertise:
Gate Dielectrics
FinFET
MOSFET
High-K Dielectrics
Epitaxial Source/Drain
Vertical Transistor
Atomic Layer Deposition
Thin Gate Dielectric
Parasitic Capacitance
Thermal Oxide
Replacement Metal Gate
52 patents (USPTO):Explore Patents
1. 12068415 - Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance (2024-08-20),
2. 11961895 - Gate stacks with multiple high-κ dielectric layers (2024-04-16),
3. 11888048 - Gate oxide for nanosheet transistor devices (2024-01-30),
4. 11876124 - Vertical transistor having an oxygen-blocking layer (2024-01-16),
5. 11515427 - Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance (2022-11-29),
6. 11476346 - Vertical transistor having an oxygen-blocking top spacer (2022-10-18),
7. 11211474 - Gate oxide for nanosheet transistor devices (2021-12-28),
8. 10438853 - Methods, apparatus and system for forming a FinFET device comprising a first portion capable of operating at a first voltage and a second portion capable of operating at a second voltage (2019-10-08),
9. 10395993 - Methods and structure to form high K metal gate stack with single work-function metal (2019-08-27),
10. 10361289 - Gate oxide formation through hybrid methods of thermal and deposition processes and method for producing the same (2019-07-23),
11. 10106892 - Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same (2018-10-23),
12. 9806161 - Integrated circuit structure having thin gate dielectric device and thick gate dielectric device (2017-10-31),
13. 9741720 - Higher 'K' gate dielectric cap for replacement metal gate (RMG) FINFET devices (2017-08-22),
14. 9741657 - TSV deep trench capacitor and anti-fuse structure (2017-08-22),
15. 9673108 - Fabrication of higher-K dielectrics (2017-06-06),

Title: **Innovations by Shahab Siddiqui: A Leader in Semiconductor Technology**

Introduction

Shahab Siddiqui is an accomplished inventor based in White Plains, NY, with an impressive portfolio of 52 patents. His work primarily focuses on advancements in semiconductor technology, particularly in the areas of vertical transport field effect transistors and high-κ dielectric materials. His innovative approaches have contributed significantly to the development of modern electronic devices.

Latest Patents

Among Shahab Siddiqui's latest patents is the invention titled "Precise Bottom Junction Formation for Vertical Transport Field Effect Transistor with Highly Doped Epitaxial Source/Drain, Sharp Junction Gradient, and/or Reduced Parasitic Capacitance." This patent details a sophisticated method for creating an efficient junction within semiconductor devices, highlighting the process of epitaxial growth and the formation of fins to optimize junction efficiency.

Another significant patent revolves around "Gate Stacks with Multiple High-κ Dielectric Layers," which outlines the structure of semiconductor devices utilizing multiple layers of high-κ dielectrics. This invention aims to enhance the performance of transistors, making them more efficient and capable of meeting the demands of advanced electronic applications.

Career Highlights

Shahab Siddiqui has had a distinguished career working with prominent companies such as IBM and Globalfoundries Inc. His contributions at these organizations have been pivotal in pushing the boundaries of semiconductor research and development. Throughout his career, he has developed innovative techniques that streamline the manufacturing processes of high-performance electronic components.

Collaborations

During his time in the industry, Shahab has collaborated with notable colleagues, including Michael Patrick Chudzik and Unoh Kwon. This collaboration has fostered an environment of innovation and knowledge-sharing, leading to groundbreaking advancements in semiconductor technologies.

Conclusion

Shahab Siddiqui stands out as a prominent figure in the field of semiconductor innovations. His extensive patent portfolio and collaborative efforts showcase his dedication to advancing technology in electronic devices. As the industry continues to evolve, contributions from innovators like Shahab pave the way for future breakthroughs that will shape the electronics landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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