The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Mar. 30, 2023
International Business Machines Corporation, Armonk, NY (US);
Yann Mignot, Slingerlands, NY (US);
Shahab Siddiqui, Clifton Park, NY (US);
Chanro Park, Clifton Park, NY (US);
Ruilong Xie, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A MOSFET includes a semiconductor substrate that has a frontside and a backside; a metal gate at the frontside of the substrate; a first source/drain structure at the frontside of the substrate, adjacent to the metal gate in a first direction; and a first source/drain contact at the frontside of the first source/drain structure. Also included are a backside power rail at the backside of the substrate; and a recessed via that connects the first source/drain contact through the substrate to the backside power rail. The recessed via is adjacent to the first source/drain structure in a direction perpendicular to the first direction. A dielectric cap covers a frontside of the first source/drain contact. A gate contact is disposed at a frontside of the dielectric cap. The gate contact at least partly overlies the first source/drain contact.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile