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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11876124 B1

PDFFull Text
Date of Patent:
Jan. 16, 2024

Filed:

Jul. 07, 2022

Vertical transistor having an oxygen-blocking layer

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chen Zhang, Albany, NY (US);

Christopher J. Waskiewicz, Rexford, NY (US);

Shahab Siddiqui, Clifton Park, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Cantor Colburn LLP

Anthony Mauricio Pallone

Primary Examiner:

Mark V Prenty

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 29/0653 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract

Embodiments of the invention are directed to a semiconductor device that includes a channel fin; a trench adjacent to an upper region of the channel fin; and an oxygen-blocking layer within the trench. The oxygen-blocking layer includes an oxygen gettering material configured to remove oxygen from an environment to which the oxygen-blocking layer is exposed.

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Zhang, Chen. (2024). Vertical transistor having an oxygen-blocking layer (U.S. Patent No. 11876124). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11876124

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