The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
Mar. 22, 2018
Globalfoundries Inc., Grand Cayman, KY;
Wei Zhao, Fort Lee, NJ (US);
Shahab Siddiqui, Clifton Park, NY (US);
Haiting Wang, Clifton Park, NY (US);
Ting-Hsiang Hung, Clifton Park, NY (US);
Yiheng Xu, Clifton Park, NY (US);
Beth Baumert, Ballston Lake, NY (US);
Jinping Liu, Ballston Lake, NY (US);
Scott Beasor, Greenwich, NY (US);
Yue Zhong, Ballston Lake, NY (US);
Shesh Mani Pandey, Saratoga Springs, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A method of thermally oxidizing a Si fin to form an oxide layer over the Si fin and then forming an ALD oxide layer over the oxide layer and resulting device are provided. Embodiments include forming a plurality of Si fins on a Si substrate; forming a dielectric layer over the plurality of Si fins and the Si substrate; recessing the dielectric layer, exposing a top portion of the plurality of Si fins; thermally oxidizing surface of the top portion of the plurality of Si fins, an oxide layer formed; and forming an ALD oxide layer over the oxide layer.