Greenwich, NY, United States of America

Scott Beasor

USPTO Granted Patents = 33 

Average Co-Inventor Count = 4.6

ph-index = 5

Forward Citations = 75(Granted Patents)


Location History:

  • Rhinebeck, NY (US) (2015 - 2016)
  • Greenwich, NY (US) (2016 - 2020)
  • Greenwick, NY (US) (2020)

Company Filing History:


Years Active: 2015-2020

where 'Filed Patents' based on already Granted Patents

33 patents (USPTO):

Title: Scott Beasor: Innovator in FinFET Technology

Introduction

Scott Beasor is a prominent inventor based in Greenwich, NY, who has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 33 patents, Scott's work primarily focuses on innovations in FinFET devices, which are crucial for modern electronic applications.

Latest Patents

Scott's latest patents include groundbreaking advancements in FinFET architecture. One of the notable innovations is a method for enhancing the manufacturing process of FinFET devices. This patent details an isolation architecture designed to improve the reliability of gate and source/drain contact locations. It utilizes a low-k spacer layer combined with a contact etch stop layer. Furthermore, it describes the replacement of the upper portion of the isolation architecture with a high-k, etch-selective spacer layer, which minimizes the degradation during etching. This design effectively inhibits short circuits and reduces parasitic capacitance between critical elements within the device.

Another recent patent highlights spacer structures for a transistor device. This innovation reveals an integrated circuit product that features a final gate structure with a series of strategically placed components, including a gate cap and low-k sidewall spacers. The approach encompasses first and second contact etch stop layers positioned adjacent to the low-k sidewall spacers, along with high-k spacers fitted into recesses of the contact etch stop layers, leading to improved performance and reliability.

Career Highlights

Scott Beasor is currently associated with GlobalFoundries Inc., a leading semiconductor manufacturer. His career reflects a steadfast commitment to advancing FinFET technology, positioning him as a significant player in the semiconductor industry.

Collaborations

Throughout his career, Scott has collaborated with talented colleagues, including Haiting Wang and Hui Zang. These collaborations have further propelled innovations within their shared projects, enhancing the overall impact of their work in the semiconductor sector.

Conclusion

With an extensive array of patents and a dedication to semiconductor advancements, Scott Beasor continues to be a driving force in the development of FinFET technology. His contributions significantly enhance the capabilities of modern electronic devices, solidifying his reputation as a leading inventor in the field.

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