The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Jul. 03, 2018
Globalfoundries Inc., Grand Cayman, KY;
Sipeng Gu, Clifton Park, NY (US);
Akshey Sehgal, Malta, NY (US);
Xinyuan Dou, Clifton Park, NY (US);
Sunil K. Singh, Mechanicville, NY (US);
Ravi P. Srivastava, Clifton Park, NY (US);
Haiting Wang, Clifton Park, NY (US);
Scott H. Beasor, Greenwich, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
This disclosure is directed to an integrated circuit (IC) structure. The IC structure may include a semiconductor structure including two source/drain regions; a metal gate positioned on the semiconductor structure adjacent to and between the source/drain regions; a metal cap with a different metal composition than the metal gate and having a thickness in the range of approximately 0.5 nanometer (nm) to approximately 5 nm positioned on the metal gate; a first dielectric cap layer positioned above the semiconductor structure; an inter-layer dielectric (ILD) positioned above the semiconductor structure and laterally abutting both the metal cap and the metal gate, wherein an upper surface of the ILD has a greater height above the semiconductor structure than an upper surface of the metal gate; a second dielectric cap layer positioned on the ILD and above the metal cap; and a contact on and in electrical contact with the metal cap.