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For the Inventor, By the Inventor

Clifton Park, NY, United States of America

Sipeng Gu

LinkedIn
USPTO Granted Patents = 58 

Average Co-Inventor Count = 3.6

ph-index = 5

Forward Citations = 53(Granted Patents)

Forward Citations (Not Self Cited) = 50(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • New York, NY (US) (2022)
  • Gloucester, MA (US) (2023)
  • Clifton Park, NY (US) (2015 - 2024)

Company Filing History:

goldMedal25 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal23 out of 935 
 
Globalfoundries U.S. Inc.
 patents
bronzeMedal10 out of 13,700 
 
Applied Materials, Inc.
 patents

Years Active: 2015-2025

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Areas of Expertise:
Vertical FinFET
Ion Implantation
Memory Devices
Transistor Structures
Gate Structures
Localized Stressor Formation
High Resistivity Substrates
Multi-Level Isolation
Metal-Insulator-Metal Capacitors
Integrated Circuit Structures
Diffusion Break Structures
Field Effect Transistors
58 patents (USPTO):Explore Patents
1. 12457731 - Bottom contact formation for 4Fvertical DRAM (2025-10-28),
2. 12369312 - Vertical FinFet formation using directional deposition (2025-07-22),
3. 11955533 - Ion implantation to reduce nanosheet gate length variation (2024-04-09),
4. 11908917 - Gate structures (2024-02-20),
5. 11908857 - Semiconductor devices having late-formed isolation structures (2024-02-20),
6. 11812670 - Memory device comprising a top via electrode and methods of making such a memory device (2023-11-07),
7. 11785860 - Top electrode for a memory device and methods of making such a memory device (2023-10-10),
8. 11728383 - Localized stressor formation by ion implantation (2023-08-15),
9. 11728214 - Techniques for selective tungsten contact formation on semiconductor device elements (2023-08-15),
10. 11721728 - Self-aligned contact (2023-08-08),
11. 11664419 - Isolation method to enable continuous channel layer (2023-05-30),
12. 11610972 - Technique for reducing gate induced drain leakage in DRAM cells (2023-03-21),
13. 11594441 - Handling for high resistivity substrates (2023-02-28),
14. 11569437 - Memory device comprising a top via electrode and methods of making such a memory device (2023-01-31),
15. 11563085 - Transistors with separately-formed source and drain (2023-01-24),

Title: The Innovative Journey of Sipeng Gu

Introduction:

Sipeng Gu, a talented inventor hailing from Clifton Park, NY, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Sipeng Gu's latest patents include a cutting-edge software application for enhancing cybersecurity measures in cloud computing systems and a revolutionary algorithm for optimizing energy consumption in smart homes.

Career Highlights:

Throughout his illustrious career, Sipeng Gu has been recognized for his exceptional problem-solving skills and innovative thinking. He has received multiple awards for his contributions to the tech industry and has been invited to speak at prestigious conferences worldwide.

Collaborations:

Sipeng Gu has collaborated with leading tech companies and research institutions to further develop his inventions. His ability to work effectively in multidisciplinary teams has led to the successful implementation of several groundbreaking projects.

Conclusion:

In conclusion, Sipeng Gu's passion for innovation and his dedication to pushing the boundaries of technology have solidified his reputation as a visionary inventor in the field. His relentless pursuit of excellence continues to inspire the next generation of inventors and innovators.

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