The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Nov. 18, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Qintao Zhang, Mt Kisco, NY (US);

Sipeng Gu, Clifton Park, NY (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H10B 12/36 (2023.02); H01L 21/762 (2013.01); H10B 12/056 (2023.02); H10B 12/482 (2023.02);
Abstract

Disclosed herein are approaches for forming contacts in a 4Fvertical dynamic random-access memory device. One method includes forming a hardmask over a plurality of pillars and over a plurality of anchors, wherein the pillars are separated from one another by a STI, and removing the STI and etching through the hardmask to form a plurality of gate trenches. The method may further include delivering a capping material to the pillars at a non-zero angle relative to a perpendicular extending from an upper surface of the pillars, wherein the capping material forms a capping layer along an upper portion of the pillars without forming the capping layer along a lower portion of the pillars. The method may further include etching the pillars to trim the lower portion of the pillars, and forming a plurality of contacts in the upper portion of the pillars.


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