The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Apr. 13, 2020
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Sipeng Gu, Clifton Park, NY (US);
Haiting Wang, Clifton Park, NY (US);
Yanping Shen, Saratoga Springs, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H10B 51/30 (2023.01); H10B 53/30 (2023.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10B 51/30 (2023.02); H10B 53/30 (2023.02); H10B 61/00 (2023.02); H10B 63/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 70/011 (2023.02); H10N 70/231 (2023.02); H10N 70/841 (2023.02);
Abstract
One illustrative device disclosed herein includes a memory cell positioned in a first opening in at least one layer of insulating material. The memory cell comprises a bottom electrode, a memory state material positioned above the bottom electrode and an internal sidewall spacer positioned within the first opening, wherein the internal sidewall spacer defines a spacer opening. The device also comprises a top electrode positioned within the spacer opening.