Clifton Park, NY, United States of America

Haiting Wang

This inventor holds 121 USPTO granted patents and 14 published patent applications, primarily in Semiconductor Devices (CPC class H01L29-66545). Top assignees: Globalfoundries Inc., Globalfoundries U.S. Inc.. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Haiting Wang. Retrieved from https://idiyas.com/inventor/haiting-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 121 (Patent Applications = 14)

% Patents Active = 89.3

Average Co-Inventor Count = 4.2

ph-index = 7

Forward Citations = 233(Granted Patents)

Forward Citations (Not Self Cited) = 210(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Malta, NY (US) (2022)
Clifton Park, NY (US) (2014 - 2024)

Company Filing History:

Globalfoundries U.S. Inc.

patents

Years Active: 2014-2026

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Areas of Expertise:

Bipolar Junction Transistor

High-Voltage Structures

Memory Device

Silicon Germanium Fins

Field Effect Transistor

Transistor Device

Isolation Structures

Lateral Heterojunction

Nanosheet Intrinsic Base

Replacement Gate Structure

Vertical Nanowire

Epitaxial Semiconductor

121 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12648171 - Wraparound gate structure (2026-06-02),

2. 12495575 - Multi-channel replacement metal gate device (2025-12-09),

3. 12389627 - Silicon germanium fins and integration methods (2025-08-12),

4. 12389616 - Transistors with multiple silicide layers (2025-08-12),

5. 12349459 - High-voltage semiconductor device structures (2025-07-01),

6. 12295161 - Trench isolation having three portions with different materials, and LDMOS FET including same (2025-05-06),

7. 12272740 - Bipolar junction transistors with a nanosheet intrinsic base (2025-04-08),

8. 12261215 - Fin on silicon-on-insulator (2025-03-25),

9. 12205949 - High-voltage semiconductor device structures (2025-01-21),

10. 12170315 - Field effect transistor with vertical nanowire in channel region and bottom spacer between the vertical nanowire and gate dielectric material (2024-12-17),

11. 12159926 - Lateral bipolar transistor (2024-12-03),

12. 12107154 - Single fin structures (2024-10-01),

13. 11990535 - Lateral heterojunction bipolar transistor with emitter and/or collector regrown from substrate and method (2024-05-21),

14. 11967637 - Fin-based lateral bipolar junction transistor with reduced base resistance and method (2024-04-23),

15. 11908917 - Gate structures (2024-02-20),

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Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

14 patents pending: