The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Oct. 07, 2024
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Man Gu, Malta, NY (US);
Haiting Wang, Clifton Park, NY (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H10D 64/27 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/856 (2025.01); H10D 64/518 (2025.01); H10D 84/0179 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01);
Abstract
Device structures for a high-voltage semiconductor device and methods of forming such device structures. The structure comprises a semiconductor substrate including a trench, and a field-effect transistor including a first and second source/drain regions in the semiconductor substrate, a gate dielectric inside the trench, and a gate on the gate dielectric. The gate and the gate dielectric are disposed laterally between the first and second source/drain regions.