The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Dec. 16, 2021
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Hong Yu, Clifton Park, NY (US);
Haiting Wang, Clifton Park, NY (US);
Zhenyu Hu, Clifton Park, NY (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01); H10D 30/01 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 30/62 (2025.01); H10D 30/024 (2025.01); H10D 62/832 (2025.01);
Abstract
A structure is provided, the structure comprising a substrate and a first silicon germanium fin over the substrate. A first silicon germanium layer may be arranged in the substrate, whereby the first silicon germanium layer may be coupled to the first silicon germanium fin. A second silicon germanium layer may be arranged in the substrate, whereby the second silicon germanium layer may be coupled to the first silicon germanium fin.