Hong Yu

This inventor holds 114 USPTO granted patents and 19 published patent applications and 3 EPO patents, primarily in Semiconductor Devices (CPC class H01L21-823431). Top assignees: Globalfoundries U.S. Inc., Globalfoundries Inc., Globalfoundries Singapore Pte. Ltd.. Active years: 2009-2026.

USPTO Granted Patents = 114 (Patent Applications = 19)

% Patents Active = 83.3

EPO Patents = 3 (Patent Applications = 7)

Average Co-Inventor Count = 3.4

ph-index = 13

Forward Citations = 445(Granted Patents)

Forward Citations (Not Self Cited) = 401(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Whitefish Bay, WI (US) (2013)
Singapore, SG (2009 - 2016)
Rexford, NY (US) (2015 - 2023)
Clifton Park, NY (US) (2020 - 2024)

Company Filing History:

56 out of 1,081

Globalfoundries U.S. Inc.

Globalfoundries Singapore Pte. Ltd.

patents

4. 2 out of 834,350

Other

patents

Years Active: 2009-2026

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Areas of Expertise:

Bipolar Junction Transistors

Isolation Structures

Multi-Channel Gates

High-Voltage Devices

Silicon Germanium Fins

Epitaxial Structures

Transistor Devices

Gate Dielectric Widths

Vertical Bipolar Junctions

Semiconductor Structures

Performance-Enhancing Shapes

Fin-Based Transistors

114 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12740137 - Integrated circuit with FinFET with shorter and narrower fin under gate only (2026-09-15),

2. 12684841 - Gate structure on intrinsic base layer and overhanging lateral sidewall of intrinsic base layer (2026-07-14),

3. 12660324 - Lateral capacitors of semiconductor devices (2026-06-16),

4. 12648171 - Wraparound gate structure (2026-06-02),

5. 12641871 - Fin-type field effect transistor with independently biasable supplementary gate and method (2026-05-26),

6. 12628414 - Semiconductor device including diffusion break structure and method of forming semiconductor device (2026-05-12),

7. 12628376 - Nanosheet structures with tunable channels and inner sidewall spacers (2026-05-12),

8. 12532514 - Semiconductor structure with isolation region including combination of deep and shallow trench isolation structures and method (2026-01-20),

9. 12513995 - Substrates of semiconductor devices having varying thicknesses of semiconductor layers (2025-12-30),

10. 12501624 - Memory device structures that include a capacitor (2025-12-16),

11. 12495575 - Multi-channel replacement metal gate device (2025-12-09),

12. 12471294 - Array arrangements of vertical bipolar junction transistors (2025-11-11),

13. 12464784 - Isolation structures of semiconductor devices (2025-11-04),

14. 12464745 - Bipolar junction transistor arrays (2025-11-04),

15. 12433014 - Structure having different gate dielectric widths in different regions of substrate (2025-09-30),

Title: The Innovative Journey of Inventor Hong Yu

Introduction: Hong Yu, a talented inventor based in Rexford, NY (US), has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Hong Yu's latest patents showcase his ingenuity and forward-thinking approach to innovation. His recent inventions focus on enhancing communication systems and improving efficiency in the healthcare industry.

Career Highlights: With a career spanning over two decades, Hong Yu has established himself as a visionary inventor. His work has been recognized for its impact on various sectors, including telecommunications, biotechnology, and renewable energy.

Collaborations: Throughout his career, Hong Yu has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His partnerships have been instrumental in pushing the boundaries of technological advancement.

Conclusion: Hong Yu's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a pioneering inventor in the ever-evolving world of technology. His contributions continue to inspire future generations of inventors to think outside the box and create solutions that shape the world we live in.