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For the Inventor, By the Inventor

Hong Yu

Rexford, NY, United States of America

Hong Yu

LinkedIn
USPTO Granted Patents = 104 

 

Average Co-Inventor Count = 3.3

ph-index = 12

Forward Citations = 420(Granted Patents)

Forward Citations (Not Self Cited) = 401(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Whitefish Bay, WI (US) (2013)
  • Singapore, SG (2009 - 2016)
  • Rexford, NY (US) (2015 - 2023)
  • Clifton Park, NY (US) (2020 - 2024)

Company Filing History:

goldMedal47 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal46 out of 935 
 
Globalfoundries U.S. Inc.
 patents
bronzeMedal9 out of 1,018 
 
Globalfoundries Singapore Pte. Ltd.
 patents
4. 2 out of 832,718 
Other
 patents

Years Active: 2009-2025

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Areas of Expertise:
Bipolar Junction Transistors
Vertical Bipolar Junction Transistors
Semiconductor Devices
Silicon Germanium Fins
High-Voltage Semiconductor Structures
Lateral Bipolar Transistors
Finfet Devices
Integrated Circuit Structures
Gate Dielectric Widths
Epitaxial Structures
Diffusion Blocking Spacer
Sram Bit Cells
104 patents (USPTO):Explore Patents
1. 12495575 - Multi-channel replacement metal gate device (2025-12-09),
2. 12471294 - Array arrangements of vertical bipolar junction transistors (2025-11-11),
3. 12464784 - Isolation structures of semiconductor devices (2025-11-04),
4. 12464745 - Bipolar junction transistor arrays (2025-11-04),
5. 12433014 - Structure having different gate dielectric widths in different regions of substrate (2025-09-30),
6. 12414343 - Semiconductor device with different sized epitaxial structures (2025-09-09),
7. 12389627 - Silicon germanium fins and integration methods (2025-08-12),
8. 12389616 - Transistors with multiple silicide layers (2025-08-12),
9. 12364000 - Device structures for a high-voltage semiconductor device (2025-07-15),
10. 12349374 - Lateral bipolar transistors (2025-07-01),
11. 12272740 - Bipolar junction transistors with a nanosheet intrinsic base (2025-04-08),
12. 12261215 - Fin on silicon-on-insulator (2025-03-25),
13. 12205949 - High-voltage semiconductor device structures (2025-01-21),
14. 12176426 - Bipolar transistor structure on semiconductor fin and methods to form same (2024-12-24),
15. 12107154 - Single fin structures (2024-10-01),

Title: The Innovative Journey of Inventor Hong Yu

Introduction: Hong Yu, a talented inventor based in Rexford, NY (US), has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Hong Yu's latest patents showcase his ingenuity and forward-thinking approach to innovation. His recent inventions focus on enhancing communication systems and improving efficiency in the healthcare industry.

Career Highlights: With a career spanning over two decades, Hong Yu has established himself as a visionary inventor. His work has been recognized for its impact on various sectors, including telecommunications, biotechnology, and renewable energy.

Collaborations: Throughout his career, Hong Yu has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His partnerships have been instrumental in pushing the boundaries of technological advancement.

Conclusion: Hong Yu's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a pioneering inventor in the ever-evolving world of technology. His contributions continue to inspire future generations of inventors to think outside the box and create solutions that shape the world we live in.

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