The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Oct. 11, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Hong Yu, Clifton Park, NY (US);
David Pritchard, Schenectady, NY (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/83 (2025.01); H10D 62/17 (2025.01); H10D 64/01 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 62/115 (2025.01); H10D 30/051 (2025.01); H10D 30/83 (2025.01); H10D 62/343 (2025.01); H10D 64/01 (2025.01); H10D 64/514 (2025.01);
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a first gate electrode, a second gate electrode, and an isolation structure. The first gate electrode is over the substrate and the second gate electrode is laterally adjacent thereto. The isolation structure is in contact with the first gate electrode and the second gate electrode.