David C Pritchard

This inventor holds 39 USPTO granted patents and 13 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Globalfoundries U.S. Inc., Globalfoundries Inc.. Active years: 2015-2026.

USPTO Granted Patents = 39 (Patent Applications = 13)

% Patents Active = 94.9

EPO Patents = 1 (Patent Applications = 4)

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 39(Granted Patents)

Location History:

Beacon, NY (US) (2018)
Glenville, NY (US) (2015 - 2024)

Company Filing History:

22 out of 1,077

Globalfoundries U.S. Inc.

Years Active: 2015-2026

Loading Chart...

Areas of Expertise:

Semiconductor Devices

Bipolar Junction Transistor

FDSOI Technology

Nanosheet Structures

Transistor Devices

Magnetic Tunnel Junctions

Gate Structures

Motion Detection

Antenna Structures

Integrated Circuits

Plasma Antennae

Cross Coupled Contacts

39 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12660324 - Lateral capacitors of semiconductor devices (2026-06-16),

2. 12641871 - Fin-type field effect transistor with independently biasable supplementary gate and method (2026-05-26),

3. 12628376 - Nanosheet structures with tunable channels and inner sidewall spacers (2026-05-12),

4. 12610576 - Gate structure over corner segment of semiconductor region (2026-04-21),

5. 12532746 - Structure with gate over non-aligned semiconductor regions (2026-01-20),

6. 12513995 - Substrates of semiconductor devices having varying thicknesses of semiconductor layers (2025-12-30),

7. 12501624 - Memory device structures that include a capacitor (2025-12-16),

8. 12464784 - Isolation structures of semiconductor devices (2025-11-04),

9. 12464745 - Bipolar junction transistor arrays (2025-11-04),

10. 12457799 - Antenna structure (2025-10-28),

11. 12424493 - Self-aligned double patterning with mandrel manipulation (2025-09-23),

12. 12364000 - Device structures for a high-voltage semiconductor device (2025-07-15),

13. 12356675 - Planar transistor device comprising at least one layer of a two-dimensional (2D) material (2025-07-08),

14. 11913971 - Motion-sensitive field effect transistor, motion detection system, and method (2024-02-27),

15. 11722298 - Public-private encryption key generation using Pcell parameter values and on-chip physically unclonable function values (2023-08-08),

Title: The Innovative Journey of David C Pritchard

Introduction: David C Pritchard, a talented inventor hailing from Beacon, NY, has made significant contributions to the world of technology and innovation.

Latest Patents: David C Pritchard holds several patents in various fields, including telecommunications, renewable energy, and medical devices. His most recent patent involves a groundbreaking method for enhancing solar panel efficiency.

Career Highlights: With a career spanning over two decades, David has worked for renowned tech companies, leading research institutions, and universities. His expertise in developing cutting-edge solutions has earned him a stellar reputation in the industry.

Collaborations: Throughout his career, David has collaborated with top engineers, scientists, and researchers to bring his innovative ideas to life. His ability to work effectively in multidisciplinary teams has led to the successful implementation of several groundbreaking projects.

Conclusion: David C Pritchard's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors. His remarkable achievements have undoubtedly left a lasting impact on the world of technology.