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For the Inventor, By the Inventor

Beacon, NY, United States of America

David C Pritchard

USPTO Granted Patents = 32 

 

Average Co-Inventor Count = 4.4

ph-index = 3

Forward Citations = 31(Granted Patents)


Location History:

  • Beacon, NY (US) (2018)
  • Glenville, NY (US) (2015 - 2024)

Company Filing History:

goldMedal17 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal15 out of 927 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2015-2025

where 'Filed Patents' based on already Granted Patents

32 patents (USPTO):
1. 12464784 - Isolation structures of semiconductor devices (2025-11-04),
2. 12464745 - Bipolar junction transistor arrays (2025-11-04),
3. 12457799 - Antenna structure (2025-10-28),
4. 12424493 - Self-aligned double patterning with mandrel manipulation (2025-09-23),
5. 12364000 - Device structures for a high-voltage semiconductor device (2025-07-15),
6. 12356675 - Planar transistor device comprising at least one layer of a two-dimensional (2D) material (2025-07-08),
7. 11913971 - Motion-sensitive field effect transistor, motion detection system, and method (2024-02-27),
8. 11722298 - Public-private encryption key generation using Pcell parameter values and on-chip physically unclonable function values (2023-08-08),
9. 11610843 - Well tap for an integrated circuit product and methods of forming such a well tap (2023-03-21),
10. 11581430 - Planar transistor device comprising at least one layer of a two-dimensional (2D) material and methods for making such transistor devices (2023-02-14),
11. 11276651 - IC product comprising a single active fin FinFET device and an electrically inactive fin stress reduction structure (2022-03-15),
12. 11239087 - Fully depleted devices with slots in active regions (2022-02-01),
13. 11226231 - Image sensor incorporating an array of optically switchable magnetic tunnel junctions (2022-01-18),
14. 11177182 - Vertical transistor device comprising a two-dimensional (2D) material positioned in a channel region of the device and methods of making such vertical transistor devices (2021-11-16),
15. 11094791 - Vertical transistor device with source/drain regions comprising a twi-dimensional (2D) material and methods of making such vertical transistor devices (2021-08-17),

Title: The Innovative Journey of David C Pritchard

Introduction: David C Pritchard, a talented inventor hailing from Beacon, NY, has made significant contributions to the world of technology and innovation.

Latest Patents: David C Pritchard holds several patents in various fields, including telecommunications, renewable energy, and medical devices. His most recent patent involves a groundbreaking method for enhancing solar panel efficiency.

Career Highlights: With a career spanning over two decades, David has worked for renowned tech companies, leading research institutions, and universities. His expertise in developing cutting-edge solutions has earned him a stellar reputation in the industry.

Collaborations: Throughout his career, David has collaborated with top engineers, scientists, and researchers to bring his innovative ideas to life. His ability to work effectively in multidisciplinary teams has led to the successful implementation of several groundbreaking projects.

Conclusion: David C Pritchard's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors. His remarkable achievements have undoubtedly left a lasting impact on the world of technology.

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