The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Nov. 11, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

James Mazza, Saratoga Springs, NY (US);

David Pritchard, Glenville, NY (US);

Romain Feuillette, Williston, VT (US);

Elizabeth Strehlow, Cleveland, GA (US);

Hongru Ren, Mechanicville, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10D 84/01 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H10D 84/0186 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01);
Abstract

Structures with features formed by self-aligned double patterning and methods of self-aligned multiple patterning. The structure comprises a first field-effect transistor including a first gate and a first protrusion projecting laterally from the first gate, and a second field-effect transistor including a second gate and a second protrusion projecting laterally from the second gate. The second gate and the second protrusion are spaced in a lateral direction from the first gate and the first protrusion. The structure further comprises a gate contact connecting the first protrusion of the first gate to the second protrusion the second gate.


Find Patent Forward Citations

Loading…