The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Jan. 09, 2023
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

David Pritchard, Beacon, NY (US);

Hong Yu, Clifton Park, NY (US);

Zhixing Zhao, Dresden, DE;

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/80 (2025.01); H10D 86/00 (2025.01); H10D 86/01 (2025.01); H10P 90/00 (2026.01); H10W 10/00 (2026.01); H10W 10/10 (2026.01); H10W 10/17 (2026.01);
U.S. Cl.
CPC ...
H10D 86/80 (2025.01); H10D 86/01 (2025.01); H10D 86/201 (2025.01); H10P 90/1906 (2026.01); H10W 10/014 (2026.01); H10W 10/061 (2026.01); H10W 10/17 (2026.01); H10W 10/181 (2026.01);
Abstract

A semiconductor device is provided. The semiconductor device includes a substrate, a gate electrode, an isolation structure, and an electrode plate. The gate electrode is over the substrate and the isolation structure is in contact with the gate electrode. The electrode plate is in the isolation structure.


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