Globalfoundries U.S. Inc.

Globalfoundries Inc.

David C Pritchard

Hongru Ren

Neha Nayyar

Heng Yang

Manjunatha Govinda Prabhu

Elizabeth Strehlow

Lixia Lei

Scott D Luning

Tuhin Guha Neogi

Kai Sun

Hong Yu

Jason Eugene Stephens

Salvatore Cimino

George Jonathan Kluth

James Mazza

Navneet Jain

Anurag Mittal

Deniz Elizabeth Civay

David Doman

Guillaume Bouche

Mahbub Rashed

Vikrant Kumar Chauhan

Romain H A Feuillette

Romain Feuillette

Yusheng Bian

Ajey Poovannummoottil Jacob

Vibhor Jain

Andy C Wei

Peter Baars

John Joseph Pekarik

Venkatesh P Gopinath

Lei Yuan

Zhenyu Hu

Alexander M Derrickson

Jianwei Peng

Juhan Kim

Akhilesh Ramlaut Jaiswal

David E Brown

Daniel James Dechene

Man Gu

Ryan W Sporer

Jia Zeng

Ramesh Raghavan

Xuelian Zhu

Rajesh Reddy Tummuru

Rick J Carter

Ahmed Hassan

Mohamed Rabie

Luca Pirro

Nader Magdy Hindawy

Anton Tokranov

Shafiullah Syed

Kasun Anupama Punchihewa

Terry J Bordelon

Thirunavukkarasu Ranganathan

Bernhard J Wunder

Francisco Ledesma Rabadan

Abbas Guvenilir

Heather Lazar

Benoit Francois Claude Ramadout

Galla Kiran Kumar

Brenda Lanza

Embodiments of the disclosure provide a structure and related method for a gate over semiconductor regions that are not aligned. Structures according to the disclosure include a first semiconductor region extending from a first widthwise end to a second widthwise end within a substrate. A second semiconductor region is adjacent the first semiconductor region and extends from a first widthwise end to a second widthwise end within the substrate. The second widthwise end of the second semiconductor region is non-aligned with the second widthwise end of the first semiconductor region. A gate structure is over the substrate and extends widthwise over the first semiconductor region and the second semiconductor region.

Structure with gate over non-aligned semiconductor regions

A substrate is provided. The substrate includes a base, a semiconductor layer over the base, and an insulator layer between the base and the semiconductor layer. The semiconductor layer has a first semiconductor layer portion having a first thickness, a second semiconductor layer portion having a second thickness, and a third semiconductor layer portion having a third thickness, and the first thickness, the second thickness, and the third thickness are different from each other.

Substrates of semiconductor devices having varying thicknesses of semiconductor layers

Structures for a memory device and methods of forming a structure for a memory device. The structure comprises a first transistor including a first gate structure and a first source/drain region, a second transistor including a second gate structure and a second source/drain region, and a capacitor including a first capacitor plate directly coupled to the first source/drain region, a second capacitor plate, and a capacitor dielectric layer between the first capacitor plate and the second capacitor plate.

Memory device structures that include a capacitor

Structures that include bipolar junction transistors and methods of forming such structures. The structure comprises a semiconductor layer, a substrate, and a dielectric layer disposed between the semiconductor layer and the substrate. The structure further comprises a first bipolar junction transistor including a first collector in the substrate, a first emitter, and a first base layer. The first base layer extends through the dielectric layer from the first emitter to the first collector. The structure further comprises a second bipolar junction transistor including a second collector in the substrate, a second emitter, and a second base layer. The second base layer extends through the dielectric layer from the second emitter to the second collector. The second base layer is connected to the first base layer by a section of the semiconductor layer to define a base line.

Bipolar junction transistor arrays

A semiconductor device is provided. The semiconductor device includes a substrate, a first gate electrode, a second gate electrode, and an isolation structure. The first gate electrode is over the substrate and the second gate electrode is laterally adjacent thereto. The isolation structure is in contact with the first gate electrode and the second gate electrode.

Isolation structures of semiconductor devices

The present disclosure relates to semiconductor structures and, more particularly, to antenna structures and methods of manufacture. The structure includes an antenna cell comprising a single P-well isolated by a deep trench isolation structure and including at least one diffusion region.

Antenna structure

Structures with features formed by self-aligned double patterning and methods of self-aligned multiple patterning. The structure comprises a first field-effect transistor including a first gate and a first protrusion projecting laterally from the first gate, and a second field-effect transistor including a second gate and a second protrusion projecting laterally from the second gate. The second gate and the second protrusion are spaced in a lateral direction from the first gate and the first protrusion. The structure further comprises a gate contact connecting the first protrusion of the first gate to the second protrusion the second gate.

Self-aligned double patterning with mandrel manipulation

Device structures for a high-voltage semiconductor device and methods of forming such device structures. The structure comprises a layer stack including a first dielectric layer and a second dielectric layer. The first dielectric layer includes a portion between the second dielectric layer and a semiconductor substrate. The structure further comprises a field-effect transistor including a first source/drain region in the semiconductor substrate, a second source/drain region in the semiconductor substrate, and a gate electrode on the layer stack. The gate electrode is laterally between the first and second source/drain regions, and the gate electrode overlaps with the portion of the first dielectric layer and the second dielectric layer. The structure further comprises a spacer laterally between the first source/drain region and the second dielectric layer.

Device structures for a high-voltage semiconductor device

A planar transistor device is disclosed including a gate structure positioned above a semiconductor substrate, the semiconductor substrate comprising a substantially planar upper surface, a channel region, a source region, a drain region, and at least one layer of a two-dimensional (2D) material that is positioned in at least one of the source region, the drain region or the channel region, wherein the layer of 2D material has a substantially planar upper surface, a substantially planar bottom surface and a substantially uniform vertical thickness across an entire length of the layer of 2D material in the gate length direction and across an entire width of the layer of 2D material in the gate width direction, wherein the substantially planar upper surface and the substantially planar bottom surface of the layer of 2D material are positioned approximately parallel to a substantially planar surface of the semiconductor substrate.

Planar transistor device comprising at least one layer of a two-dimensional (2D) material

Disclosed are a motion-sensitive field effect transistor (MSFET), a motion detection system, and a method. The MSFET includes a gate structure with a reservoir containing conductive fluid and gate electrode(s). Given position(s) of the gate electrode(s) and a fill level of the fluid within the reservoir, contact between the gate electrode(s) and the fluid depends upon the orientation the MSFET channel region relative to the top surface of the conductive fluid and the orientation of the MSFET channel region relative to the top surface of the conductive fluid depends upon position in space and/or movement of the MSFET and, particularly, position in space and/or movement of the chip on which the MSFET is formed. An electrical property of the MSFET in response to specific bias conditions varies depending on whether or not or to what extent the gate electrode(s) contact the fluid and is, thus, measurable for sensing chip motion.

Motion-sensitive field effect transistor, motion detection system, and method

Methods and systems generate seeds for public-private key pairs by determining a timestamp value associated with a process design kit (PDK) when a user of the PDK triggers a tool of the PDK while designing an integrated circuit device to have a physical unclonable function device (PUF). The methods and systems generate a first value by mapping the timestamp value to data of the user, generate a second value by mapping the timestamp value to configuration data of the PDK, and generate a third value by mapping the timestamp value to layout data of the PDK. A random number is then generated by applying a function to the first value, the second value, and the third value. A public-private encryption key pair is generated using the random number as a first seed number and using a second number generated by the number generation device as a second seed number.

Public-private encryption key generation using Pcell parameter values and on-chip physically unclonable function values

An illustrative device disclosed herein includes a doped well region and a conductive well tap conductively coupled to the doped well region, the conductive well tap including first and second opposing sidewall surfaces. In this example the device also includes a first sidewall spacer that has a first vertical height positioned around the conductive well tap and a second sidewall spacer positioned adjacent the first sidewall spacer along the first and second opposing sidewall surfaces of the conductive well tap, wherein the second sidewall spacer has a second vertical height that is less than the first vertical height.

Well tap for an integrated circuit product and methods of forming such a well tap

Planar transistor device comprising at least one layer of a two-dimensional (2D) material and methods for making such transistor devices

An illustrative device disclosed herein includes a semiconductor substrate and a FinFET transistor device positioned above the semiconductor substrate, wherein the FinFET transistor device has a single active fin structure. The device also includes an electrically inactive dummy fin structure positioned adjacent the single active fin structure, wherein the electrically inactive dummy fin structure is electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin.

IC product comprising a single active fin FinFET device and an electrically inactive fin stress reduction structure

The present disclosure relates to semiconductor structures and, more particularly, to devices with slotted active regions and methods of manufacture. The method includes: forming a mandrel on top of a diffusion region comprising a diffusion material; forming a first material over the mandrel and the diffusion region; removing the mandrel to form multiple spacers each having a thickness; depositing a second material over the spacers and the diffusion material; and forming slots in the diffusion region by removing a portion of the second material over the diffusion region and the underlying diffusion material.

Fully depleted devices with slots in active regions

Growing community of inventors

Beacon, NY, United States of America

David C Pritchard