The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Mar. 07, 2023
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Xuelian Zhu, San Jose, CA (US);
Navneet K. Jain, Milpitas, CA (US);
Juhan Kim, Santa Clara, CA (US);
James P. Mazza, Saratoga Springs, NY (US);
Jia Zeng, Sunnyvale, CA (US);
David C. Pritchard, Glenville, NY (US);
Mahbub Rashed, Cupertino, CA (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01Q 1/38 (2006.01); H01L 27/06 (2006.01); H01Q 1/22 (2006.01); H01Q 1/48 (2006.01); H10D 84/40 (2025.01); H10D 84/80 (2025.01); H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H10D 84/40 (2025.01); H01Q 1/2283 (2013.01); H01Q 1/38 (2013.01); H01Q 1/48 (2013.01); H10D 84/811 (2025.01); H10D 89/611 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to antenna structures and methods of manufacture. The structure includes an antenna cell comprising a single P-well isolated by a deep trench isolation structure and including at least one diffusion region.