The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2025
Filed:
Sep. 04, 2024
Globalfoundries U.s. Inc., Malta, NY (US);
Hong Yu, Clifton Park, NY (US);
David Pritchard, Glenville, NY (US);
Zhenyu Hu, Clifton Park, NY (US);
Navneet Jain, Milpitas, CA (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Device structures for a high-voltage semiconductor device and methods of forming such device structures. The structure comprises a layer stack including a first dielectric layer and a second dielectric layer. The first dielectric layer includes a portion between the second dielectric layer and a semiconductor substrate. The structure further comprises a field-effect transistor including a first source/drain region in the semiconductor substrate, a second source/drain region in the semiconductor substrate, and a gate electrode on the layer stack. The gate electrode is laterally between the first and second source/drain regions, and the gate electrode overlaps with the portion of the first dielectric layer and the second dielectric layer. The structure further comprises a spacer laterally between the first source/drain region and the second dielectric layer.