The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2025

Filed:

Nov. 06, 2024
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

David Pritchard, Glenville, NY (US);

Brenda Lanza, Austin, TX (US);

Galla Kiran Kumar, Ongole, IN;

Romain Feuillette, Williston, VT (US);

Navneet Jain, Milpitas, CA (US);

Hong Yu, Clifton Park, NY (US);

Heather Lazar, Saratoga Springs, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/10 (2023.01); H10B 53/30 (2023.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H10B 53/10 (2023.02); H10D 1/042 (2025.01); H10D 1/714 (2025.01);
Abstract

Structures for a memory device and methods of forming a structure for a memory device. The structure comprises a first transistor including a first gate structure and a first source/drain region, a second transistor including a second gate structure and a second source/drain region, and a capacitor including a first capacitor plate directly coupled to the first source/drain region, a second capacitor plate, and a capacitor dielectric layer between the first capacitor plate and the second capacitor plate.


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