The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Jun. 02, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Haiting Wang, Clifton Park, NY (US);
Hong Yu, Clifton Park, NY (US);
Zhenyu Hu, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/63 (2025.01); H10D 62/13 (2025.01);
U.S. Cl.
CPC ...
H10D 30/637 (2025.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 62/151 (2025.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a multi-channel replacement metal gate device and methods of manufacture. The structure includes: a fully depleted semiconductor on insulator substrate; a plurality of fin structures over the fully depleted semiconductor on insulator substrate; and a metal gate structure spanning over the plurality of fin structures and the fully depleted semiconductor on insulator substrate.