The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Jan. 30, 2024
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Alexander M. Derrickson, Saratoga Springs, NY (US);

Hong Yu, Clifton Park, NY (US);

Judson Robert Holt, Ballston Lake, NY (US);

Andreas Knorr, Saratoga Springs, NY (US);

Vibhor Jain, Clifton Park, NY (US);

Jeffrey Bowman Johnson, North Hero, VT (US);

Alexander L. Martin, Greenfield Center, NY (US);

Jhnanesh Somayaji, Bangalore, IN;

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/17 (2025.01); H10D 30/60 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/177 (2025.01); H10D 30/611 (2025.01); H10D 62/136 (2025.01); H10D 62/137 (2025.01); H10D 64/021 (2025.01);
Abstract

A structure including a first emitter-collector (E/C) layer over a substrate. The structure further includes an intrinsic base layer over the first E/C layer and a second E/C layer over the intrinsic base layer. The structure includes an extrinsic base layer on the intrinsic base layer and adjacent the second E/C layer. The structure includes a gate structure on the intrinsic base layer and overhanging a lateral sidewall of the intrinsic base.


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