The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Sep. 27, 2023
Globalfoundries U.s. Inc., Malta, NY (US);
Haiting Wang, Clifton Park, NY (US);
Alexander Derrickson, Troy, NY (US);
Jagar Singh, Clifton Park, NY (US);
Vibhor Jain, Williston, VT (US);
Andreas Knorr, Saratoga Springs, NY (US);
Alexander Martin, Greenfield Center, NY (US);
Judson R. Holt, Ballston Lake, NY (US);
Zhenyu Hu, Clifton Park, NY (US);
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. A structure includes: an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate; an extrinsic base vertically above the intrinsic base; a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and a raised emitter region on the semiconductor substate and laterally connected to the intrinsic base.