The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Feb. 11, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Man Gu, Malta, NY (US);
Hong Yu, Clifton Park, NY (US);
Jianwei Peng, Clifton Park, NY (US);
Haiting Wang, Clifton Park, NY (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H01L 21/285 (2006.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10D 30/0213 (2025.01); H01L 21/28518 (2013.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01);
Abstract
Structures for a transistor and methods of forming a structure for a transistor. The structure includes a first dielectric spacer, a second dielectric spacer, and a gate laterally between the first dielectric spacer and the second dielectric spacer. The gate includes a first silicide layer extending from the first dielectric spacer to the second dielectric spacer. The structure further includes a second silicide layer within the first silicide layer, and a contact that is aligned to the second silicide layer.