Jianwei Peng

This inventor holds 33 USPTO granted patents and 9 published patent applications and 1 EPO patent. Top assignees: Globalfoundries Inc., Globalfoundries U.S. Inc.. Active years: 2016-2026.

USPTO Granted Patents = 33 (Patent Applications = 9)

% Patents Active = 78.8

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 4.2

ph-index = 6

Forward Citations = 96(Granted Patents)

Location History:

Ballston Spa, NY (US) (2016)
Albany, NY (US) (2016)
Ballston Lake, NY (US) (2016 - 2017)
Latham, NY (US) (2018 - 2021)
Clifton Park, NY (US) (2020 - 2024)

Company Filing History:

Globalfoundries U.S. Inc.

patents

Years Active: 2016-2026

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Areas of Expertise:

Transistor Arrays

Semiconductor Devices

Field-Effect Transistors

Vertical Field Effect Transistors

FinFET Technology

Epitaxial Structures

Silicide Layers

Bipolar Transistors

Metal-Insulator-Metal Capacitors

Diffusion Blocking Spacers

Self-Aligned Junctions

Multi-Layer Spacers

33 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12532534 - Transistor arrays with controllable gate voltage (2026-01-20),

2. 12513995 - Substrates of semiconductor devices having varying thicknesses of semiconductor layers (2025-12-30),

3. 12414343 - Semiconductor device with different sized epitaxial structures (2025-09-09),

4. 12389616 - Transistors with multiple silicide layers (2025-08-12),

5. 12020937 - Carbon implantation for thicker gate silicide (2024-06-25),

6. 11935928 - Bipolar transistor with self-aligned asymmetric spacer (2024-03-19),

7. 11810951 - Semiconductor-on-insulator field effect transistor with performance-enhancing source/drain shapes and/or materials (2023-11-07),

8. 11798948 - Semiconductor structure with shared well (2023-10-24),

9. 11101364 - Field-effect transistors with diffusion blocking spacer sections (2021-08-24),

10. 10910471 - Device with large EPI in FinFETs and method of manufacturing (2021-02-02),

11. 10784342 - Single diffusion breaks formed with liner protection for source and drain regions (2020-09-22),

12. 10468310 - Spacer integration scheme for FNET and PFET devices (2019-11-05),

13. 10453754 - Diffused contact extension dopants in a transistor device (2019-10-22),

14. 10446483 - Metal-insulator-metal capacitors with enlarged contact areas (2019-10-15),

15. 10431665 - Multiple-layer spacers for field-effect transistors (2019-10-01),

Title: Inventor Jianwei Peng

Introduction: Jianwei Peng is a renowned inventor based in Latham, NY (US) known for his groundbreaking contributions to various technological fields.

Latest Patents: Jianwei Peng holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise.

Career Highlights: With over two decades of experience in the innovation industry, Jianwei Peng has successfully developed and commercialized numerous inventions that have had a significant impact on society.

Collaborations: Throughout his career, Jianwei Peng has collaborated with leading research institutions, universities, and companies to further advance his inventions and bring them to the market.

Conclusion: Jianwei Peng's dedication to innovation and his passion for creating solutions to complex problems have solidified his reputation as a pioneering inventor in the technology sector.