The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

Mar. 14, 2023
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

Jianwei Peng, Clifton Park, NY (US);

Hong Yu, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/01 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01); H10D 84/03 (2025.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H10D 62/151 (2025.01); H10D 64/021 (2025.01); H10D 64/259 (2025.01); H10D 64/514 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0184 (2025.01); H10D 84/038 (2025.01); H01L 21/31144 (2013.01);
Abstract

An apparatus has a first gate structure of a core device on a substrate, a first L-shaped spacer covering a sidewall of the first gate and part of the substrate adjacent to the first gate, a first raised source/drain (S/D) structure on the substrate and spaced apart from the first gate by the first L-shaped spacer, a second gate of an I/O device on the substrate, a second L-shaped spacer covering a sidewall of the second gate and part of the substrate adjacent to the second gate, and a second raised S/D structure spaced apart from the second gate by the second L-shaped spacer. The first and second L-shaped spacers have the same spacer width, and a distance between the first gate structure and a sidewall of the first S/D structure is less than a distance between the second gate structure and a sidewall of the second S/D structure.


Find Patent Forward Citations

Loading…