The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2019
Filed:
Oct. 26, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Jianwei Peng, Latham, NY (US);
Xusheng Wu, Ballston Lake, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/762 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 21/76202 (2013.01); H01L 21/823807 (2013.01); H01L 27/0924 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a spacer integration scheme for both NFET and PFET devices and methods of manufacture. The structure includes: a plurality of epitaxial grown fin structures for NFET devices having sidewall spacers of a first dimension; and a plurality epitaxial grown fin structures for PFET devices having sidewall spacers of the first dimension.