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Hopewell Junction, NY, United States of America

Xusheng Kevin Wu

This inventor holds 84 USPTO granted patents and 16 published patent applications, primarily in FinFET Technology (CPC class H01L29-66545). Top assignees: Globalfoundries Inc., Globalfoundries U.S. Inc.. Active years: 2015-2022.

USPTO Granted Patents = 84 (Patent Applications = 16)

% Patents Active = 64.3

Average Co-Inventor Count = 3.1

ph-index = 11

Forward Citations = 470(Granted Patents)

Forward Citations (Not Self Cited) = 451(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Hopewell Junction, NY (US) (2015 - 2019)
Ballston Lake, NY (US) (2015 - 2022)

Company Filing History:

Globalfoundries U.S. Inc.

patents

Years Active: 2015-2022

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Areas of Expertise:

FinFET

Transistor Devices

Gate Cut

Stress Engineering

Vertical Structures

Integrated Circuit

Contact Structures

Dielectric Isolation

Source/Drain Regions

Epitaxial Growth

Memory Cells

CMOS Applications

84 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11349013 - IC product comprising a novel insulating gate separation structure for transistor devices (2022-05-31),

2. 11081398 - Method and structure to provide integrated long channel vertical FinFet device (2021-08-03),

3. 10644156 - Methods, apparatus, and system for reducing gate cut gouging and/or gate height loss in semiconductor devices (2020-05-05),

4. 10586860 - Method of manufacturing finfet devices using narrow and wide gate cut openings in conjunction with a replacement metal gate process (2020-03-10),

5. 10522679 - Selective shallow trench isolation (STI) fill for stress engineering in semiconductor structures (2019-12-31),

6. 10510613 - Contact structures (2019-12-17),

7. 10483369 - Methods of forming replacement gate structures on transistor devices (2019-11-19),

8. 10468310 - Spacer integration scheme for FNET and PFET devices (2019-11-05),

9. 10461155 - Epitaxial region for embedded source/drain region having uniform thickness (2019-10-29),

10. 10446683 - Methods, apparatus and system for forming sigma shaped source/drain lattice (2019-10-15),

11. 10446483 - Metal-insulator-metal capacitors with enlarged contact areas (2019-10-15),

12. 10439026 - Fins with single diffusion break facet improvement using epitaxial insulator (2019-10-08),

13. 10388562 - Composite contact etch stop layer (2019-08-20),

14. 10347740 - Fin structures and multi-Vt scheme based on tapered fin and method to form (2019-07-09),

15. 10347729 - Device for improving performance through gate cut last process (2019-07-09),

Title: The Innovative Journey of Xusheng Kevin Wu

Introduction: Xusheng Kevin Wu, a talented inventor hailing from Hopewell Junction, NY, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Xusheng Kevin Wu holds several patents in the areas of artificial intelligence, renewable energy, and advanced robotics, showcasing his diverse range of expertise and creativity.

Career Highlights: With a background in engineering and computer science, Xusheng Kevin Wu has worked for top tech companies, leading research institutions, and universities, where he has spearheaded projects that have pushed the boundaries of technological advancement.

Collaborations: Throughout his career, Xusheng Kevin Wu has collaborated with fellow inventors, patent attorneys, and industry experts to bring his ideas to life. His ability to work in multidisciplinary teams has led to the successful development of cutting-edge technologies.

Conclusion: Xusheng Kevin Wu's passion for innovation, coupled with his relentless drive to solve complex problems, has established him as a prominent figure in the world of inventions. His work continues to inspire future generations of inventors to think outside the box and pursue their creative visions.

Profile summary based on public USPTO records.

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