The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2019
Filed:
Oct. 30, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Haigou Huang, Rexford, NY (US);
Xusheng Wu, Ballston Lake, NY (US);
Jinsheng Gao, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/82345 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823842 (2013.01); H01L 27/0886 (2013.01);
Abstract
One illustrative method disclosed herein includes, among other things, forming a sacrificial gate structure above a semiconductor substrate, the sacrificial gate structure comprising a sacrificial gate insulation layer and a multi-layer sacrificial gate electrode structure, removing the sacrificial gate structure to form a replacement gate cavity, and forming a replacement gate structure in the replacement gate cavity.