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For the Inventor, By the Inventor

Clifton Park, NY, United States of America

Jinsheng Gao

USPTO Granted Patents = 17 

Average Co-Inventor Count = 4.8

ph-index = 4

Forward Citations = 44(Granted Patents)


Location History:

  • Ballston Spa, NY (US) (2018 - 2019)
  • Clifton Parkl, NY (US) (2019)
  • Clifton Park, NY (US) (2018 - 2022)

Company Filing History:

goldMedal15 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal2 out of 927 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2018-2022

where 'Filed Patents' based on already Granted Patents

17 patents (USPTO):
1. 11349013 - IC product comprising a novel insulating gate separation structure for transistor devices (2022-05-31),
2. 10930549 - Cap structure (2021-02-23),
3. 10644156 - Methods, apparatus, and system for reducing gate cut gouging and/or gate height loss in semiconductor devices (2020-05-05),
4. 10559470 - Capping structure (2020-02-11),
5. 10522639 - Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device (2019-12-31),
6. 10483369 - Methods of forming replacement gate structures on transistor devices (2019-11-19),
7. 10460986 - Cap structure (2019-10-29),
8. 10418455 - Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device (2019-09-17),
9. 10388562 - Composite contact etch stop layer (2019-08-20),
10. 10340142 - Methods, apparatus and system for self-aligned metal hard masks (2019-07-02),
11. 10325819 - Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET device (2019-06-18),
12. 10269654 - Methods, apparatus and system for replacement contact for a finFET device (2019-04-23),
13. 10256089 - Replacement contact cuts with an encapsulated low-K dielectric (2019-04-09),
14. 10204797 - Methods, apparatus, and system for reducing step height difference in semiconductor devices (2019-02-12),
15. 10204784 - Methods of forming features on integrated circuit products (2019-02-12),

Title: Jinsheng Gao: Innovator in Semiconductor Technology

Introduction

Jinsheng Gao is a prominent inventor based in Clifton Park, NY (US), known for his significant contributions to semiconductor technology. With a total of 17 patents to his name, he has made remarkable advancements in the field of integrated circuits and transistor devices.

Latest Patents

One of his latest patents involves an integrated circuit product that features a novel insulating gate separation structure for transistor devices. This innovative design includes a first final gate structure and a second final gate structure, with an insulating gate separation structure positioned between them. The structure is characterized by an inverted T-shaped cross-sectional configuration in at least one direction. Another notable patent pertains to a cap structure, which includes a gate structure made of conductive gate material, sidewall spacers, and a capping material that extends over the sidewall spacers.

Career Highlights

Throughout his career, Jinsheng Gao has worked with leading companies in the semiconductor industry, including GlobalFoundries Inc. and GlobalFoundries U.S. Inc. His work has been instrumental in advancing semiconductor technologies and improving the performance of integrated circuits.

Collaborations

Jinsheng has collaborated with notable professionals in the field, including Haigou Huang and Daniel J Jaeger. These collaborations have contributed to the development of innovative solutions in semiconductor technology.

Conclusion

Jinsheng Gao's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a leading inventor. His work continues to influence advancements in integrated circuits and transistor devices.

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