The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2022

Filed:

Aug. 23, 2019
Applicant:

Globalfoundries U.s. Inc.;

Inventors:

Haigou Huang, Rexford, NY (US);

Xusheng Wu, Ballston Lake, NY (US);

Jinsheng Gao, Clifton Park, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/82345 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823842 (2013.01); H01L 27/0886 (2013.01); H01L 29/66795 (2013.01);
Abstract

One illustrative integrated circuit product disclosed herein includes a first final gate structure having a first end surface and a second final gate structure having a second end surface. In this embodiment, the integrated circuit product also includes an insulating gate separation structure positioned between the first and second final gate structures, wherein the first end surface contacts a first side surface of the insulating gate separation structure and the second end surface contacts a second side surface of the insulating gate separation structure. In this embodiment, the insulating gate separation structure has an inverted T-shaped cross-sectional configuration in at least one direction.


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