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For the Inventor, By the Inventor

Rexford, NY, United States of America

Haigou Huang

USPTO Granted Patents = 65 

Average Co-Inventor Count = 4.0

ph-index = 11

Forward Citations = 379(Granted Patents)

Forward Citations (Not Self Cited) = 359(Oct 12, 2025)


Inventors with similar research interests:


Location History:

  • Malta, NY (US) (2018)
  • Rexford, NY (US) (2015 - 2023)

Company Filing History:

goldMedal59 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal6 out of 927 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2015-2023

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65 patents (USPTO):
1. 11651992 - Gap fill void and connection structures (2023-05-16),
2. 11349013 - IC product comprising a novel insulating gate separation structure for transistor devices (2022-05-31),
3. 11114542 - Semiconductor device with reduced gate height budget (2021-09-07),
4. 10964599 - Multi-step insulator formation in trenches to avoid seams in insulators (2021-03-30),
5. 10930549 - Cap structure (2021-02-23),
6. 10923388 - Gap fill void and connection structures (2021-02-16),
7. 10777413 - Interconnects with non-mandrel cuts formed by early block patterning (2020-09-15),
8. 10770344 - Chamferless interconnect vias of semiconductor devices (2020-09-08),
9. 10714376 - Method of forming semiconductor material in trenches having different widths, and related structures (2020-07-14),
10. 10644156 - Methods, apparatus, and system for reducing gate cut gouging and/or gate height loss in semiconductor devices (2020-05-05),
11. 10586860 - Method of manufacturing finfet devices using narrow and wide gate cut openings in conjunction with a replacement metal gate process (2020-03-10),
12. 10559470 - Capping structure (2020-02-11),
13. 10529831 - Methods, apparatus, and system for forming epitaxial formations with reduced risk of merging (2020-01-07),
14. 10522639 - Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device (2019-12-31),
15. 10510613 - Contact structures (2019-12-17),

Title: The Innovative Mind of Haigou Huang

Introduction:

Haigou Huang, a talented inventor based in Rexford, NY, is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents:

Haigou Huang's latest patents include cutting-edge advancements in artificial intelligence algorithms for autonomous vehicles, smart home technology, and renewable energy solutions.

Career Highlights:

With a career spanning over two decades, Haigou Huang has established himself as a visionary in the tech industry. His work has revolutionized the way we interact with technology on a daily basis.

Collaborations:

Throughout his career, Haigou Huang has collaborated with leading tech companies, research institutions, and universities to further push the boundaries of innovation. His collaborative spirit has led to the development of groundbreaking technologies that have impacted industries worldwide.

Conclusion:

In conclusion, Haigou Huang's passion for innovation and his relentless drive to push the boundaries of technology have solidified his position as a prominent figure in the world of inventors. His contributions continue to inspire future generations of innovators to think outside the box and create a better tomorrow.

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