Haigou Huang

This inventor holds 65 USPTO granted patents and 6 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Globalfoundries Inc., Globalfoundries U.S. Inc.. Active years: 2015-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Haigou Huang. Retrieved from https://idiyas.com/inventor/haigou-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 65 (Patent Applications = 6)

% Patents Active = 81.5

Average Co-Inventor Count = 4.0

ph-index = 11

Forward Citations = 387(Granted Patents)

Forward Citations (Not Self Cited) = 360(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Malta, NY (US) (2018)
Rexford, NY (US) (2015 - 2023)

Company Filing History:

Globalfoundries U.S. Inc.

patents

Years Active: 2015-2023

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Areas of Expertise:

Gate Structures

Interconnects

FinFET Technology

Trench Formation

Contact Structures

Epitaxial Formations

Replacement Metal Gate

Vertical Transistor

Self-Aligned Contacts

Nanosheet Transistor

Dielectric Spacer

Insulator Formation

65 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11651992 - Gap fill void and connection structures (2023-05-16),

2. 11349013 - IC product comprising a novel insulating gate separation structure for transistor devices (2022-05-31),

3. 11114542 - Semiconductor device with reduced gate height budget (2021-09-07),

4. 10964599 - Multi-step insulator formation in trenches to avoid seams in insulators (2021-03-30),

5. 10930549 - Cap structure (2021-02-23),

6. 10923388 - Gap fill void and connection structures (2021-02-16),

7. 10777413 - Interconnects with non-mandrel cuts formed by early block patterning (2020-09-15),

8. 10770344 - Chamferless interconnect vias of semiconductor devices (2020-09-08),

9. 10714376 - Method of forming semiconductor material in trenches having different widths, and related structures (2020-07-14),

10. 10644156 - Methods, apparatus, and system for reducing gate cut gouging and/or gate height loss in semiconductor devices (2020-05-05),

11. 10586860 - Method of manufacturing finfet devices using narrow and wide gate cut openings in conjunction with a replacement metal gate process (2020-03-10),

12. 10559470 - Capping structure (2020-02-11),

13. 10529831 - Methods, apparatus, and system for forming epitaxial formations with reduced risk of merging (2020-01-07),

14. 10522639 - Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device (2019-12-31),

15. 10510613 - Contact structures (2019-12-17),

Title: The Innovative Mind of Haigou Huang

Introduction:

Haigou Huang, a talented inventor based in Rexford, NY, is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents:

Haigou Huang's latest patents include cutting-edge advancements in artificial intelligence algorithms for autonomous vehicles, smart home technology, and renewable energy solutions.

Career Highlights:

With a career spanning over two decades, Haigou Huang has established himself as a visionary in the tech industry. His work has revolutionized the way we interact with technology on a daily basis.

Collaborations:

Throughout his career, Haigou Huang has collaborated with leading tech companies, research institutions, and universities to further push the boundaries of innovation. His collaborative spirit has led to the development of groundbreaking technologies that have impacted industries worldwide.

Conclusion:

In conclusion, Haigou Huang's passion for innovation and his relentless drive to push the boundaries of technology have solidified his position as a prominent figure in the world of inventors. His contributions continue to inspire future generations of innovators to think outside the box and create a better tomorrow.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

6 patents pending: