The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

Jul. 12, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Yuping Ren, Clifton Park, NY (US);

Guoxiang Ning, Clifton Park, NY (US);

Haigou Huang, Rexford, NY (US);

Sunil K. Singh, Mechanicville, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/02164 (2013.01); H01L 21/02186 (2013.01); H01L 21/02271 (2013.01); H01L 21/0332 (2013.01); H01L 21/0338 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01);
Abstract

Methods of fabricating an interconnect structure. A hardmask is deposited over a dielectric layer, and a block mask is formed that is arranged over an area on the hardmask. After forming the block mask, a first mandrel and a second mandrel are formed on the hardmask. The first mandrel is laterally spaced from the second mandrel, and the area on the hardmask is arranged between the first mandrel and the second mandrel. The block mask may be used to provide a non-mandrel cut separating the tips of interconnects subsequently formed in the dielectric layer.


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