The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Jan. 11, 2021
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Haigou Huang, Rexford, NY (US);
Yuping Ren, Clifton Park, NY (US);
Paul Ackmann, Gansevoort, NY (US);
Guoxiang Ning, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/027 (2006.01); H01L 21/283 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76808 (2013.01); H01L 21/0276 (2013.01); H01L 21/283 (2013.01); H01L 21/311 (2013.01); H01L 21/76814 (2013.01); H01L 21/76816 (2013.01); H01L 21/76879 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to gap fill void and connection structures and methods of manufacture. The structure includes: a gate structure comprising source and drain regions; a gate contact in direct contact and overlapping the gate structure; and source and drain contacts directly connecting to the source and drain regions, respectively.