The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 17, 2019

Filed:

Jan. 23, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Jiehui Shu, Clifton Park, NY (US);

Xusheng Wu, Ballston Lake, NY (US);

Haigou Huang, Rexford, NY (US);

John H. Zhang, Altamont, NY (US);

Pei Liu, Clifton Park, NY (US);

Laertis Economikos, Wappingers Falls, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/49 (2006.01); H01L 23/535 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823475 (2013.01); H01L 21/28079 (2013.01); H01L 21/76805 (2013.01); H01L 21/76807 (2013.01); H01L 21/76889 (2013.01); H01L 21/76895 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 23/535 (2013.01); H01L 27/0886 (2013.01); H01L 29/4983 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a contact over an active gate structure and methods of manufacture. The structure includes: an active gate structure composed of conductive material located between sidewall material; an upper sidewall material above the sidewall material, the upper sidewall material being different material than the sidewall material; and a contact structure in electrical contact with the conductive material of the active gate structure. The contact structure is located between the sidewall material and between the upper sidewall material.


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