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Clifton Park, NY, United States of America

Jiehui Shu

USPTO Granted Patents = 82 (Patent Applications = 17)

Average Co-Inventor Count = 3.7

ph-index = 6

Forward Citations = 135(Granted Patents)

Forward Citations (Not Self Cited) = 127(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Ballston Lake, NY (US) (2018)
Clifton Park, NY (US) (2016 - 2023)
Dalian, CN (2021 - 2023)

Company Filing History:

53 out of 5,671

Globalfoundries Inc.

Globalfoundries U.S. Inc.

1 out of 832,843

Other

patents

Years Active: 2016-2023

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Areas of Expertise:

Self-Aligned Contact

Gate Cut Isolation

Transistors

Semiconductor Devices

FinFET

Electrical Fuse Formation

Diffusion Break Structures

Asymmetric Source Drain Structures

Integrated Circuits

Low Resistance Gate Structures

Mask-Free Methods

Multiple Threshold Voltage Devices

82 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11721728 - Self-aligned contact (2023-08-08),

2. 11610965 - Gate cut isolation including air gap, integrated circuit including same and related method (2023-03-21),

3. 11563085 - Transistors with separately-formed source and drain (2023-01-24),

4. 11522068 - IC product comprising an insulating gate separation structure positioned between end surfaces of adjacent gate structures (2022-12-06),

5. 11482456 - Forming two portion spacer after metal gate and contact formation, and related IC structure (2022-10-25),

6. 11362178 - Asymmetric source drain structures (2022-06-14),

7. 11349030 - Methods of forming transistor devices comprising a single semiconductor structure and the resulting devices (2022-05-31),

8. 11349028 - Semiconductor device with gate cut structure (2022-05-31),

9. 11348870 - Electrical fuse formation during a multiple patterning process (2022-05-31),

10. 11264382 - Fin-type field effect transistor with reduced fin bulge and method (2022-03-01),

11. 11217584 - Limiting lateral epitaxy growth at N-P boundary using inner spacer, and related structure (2022-01-04),

12. 11177385 - Transistors with a hybrid source or drain (2021-11-16),

13. 11171237 - Middle of line gate structures (2021-11-09),

14. 11145716 - Semiconductor devices with low resistance gate structures (2021-10-12),

15. 11127834 - Gate structures (2021-09-21),

Title: The Innovative Journey of Jiehui Shu

Introduction:

Jiehui Shu, a talented inventor based in Clifton Park, NY (US), has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents:

Jiehui Shu holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovative thinking.

Career Highlights:

With a background in engineering and a passion for problem-solving, Jiehui Shu has successfully brought several inventions from concept to reality, revolutionizing industries and improving people's lives.

Collaborations:

Throughout his career, Jiehui Shu has collaborated with leading research institutions, universities, and tech companies to further develop his inventions and bring them to the market, demonstrating his commitment to innovation and excellence.

Conclusion:

In conclusion, Jiehui Shu's relentless pursuit of innovation and his dedication to creating impactful solutions have solidified his reputation as a visionary inventor in the technology sector. His work continues to inspire future generations of inventors and shape the landscape of technological advancements.

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