The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2021

Filed:

Apr. 17, 2019
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Yanping Shen, Saratoga Springs, NY (US);

Halting Wang, Clifton Park, NY (US);

Hui Zang, Guilderland, NY (US);

Jiehui Shu, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/482 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/823437 (2013.01); H01L 21/823821 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to middle of line gate structures and methods of manufacture. The structure includes: a plurality of adjacent gate structures; a bridged gate structure composed of a plurality of the adjacent gate structures; source and drain regions adjacent to the bridged gate structure and comprising source and drain metallization features; and contacts to the bridged gate structure and the source and drain metallization features.


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