IDiyas

For the Inventor, By the Inventor

Clifton Park, NY, United States of America

Halting Wang

USPTO Granted Patents = 10

Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal10 out of 927 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2021-2023

where 'Filed Patents' based on already Granted Patents

10 patents (USPTO):
1. 11721728 - Self-aligned contact (2023-08-08),
2. 11569437 - Memory device comprising a top via electrode and methods of making such a memory device (2023-01-31),
3. 11462632 - Lateral bipolar junction transistor device and method of making such a device (2022-10-04),
4. 11329158 - Three part source/drain region structure for transistor (2022-05-10),
5. 11289474 - Passive devices over polycrystalline semiconductor fins (2022-03-29),
6. 11171237 - Middle of line gate structures (2021-11-09),
7. 11171036 - Preventing dielectric void over trench isolation region (2021-11-09),
8. 11133417 - Transistors with a sectioned epitaxial semiconductor layer (2021-09-28),
9. 11127834 - Gate structures (2021-09-21),
10. 11075298 - LDMOS integrated circuit product (2021-07-27),

Title: Halting Wang - Innovator in Semiconductor Technology

Introduction

Halting Wang is a notable inventor based in Clifton Park, NY, with an impressive portfolio of 10 patents in the semiconductor technology field. His contributions to the industry reflect his expertise and innovative mindset, making significant strides in advancements that influence modern electronics.

Latest Patents

Wang's latest patents demonstrate his focus on enhancing semiconductor structures. One of his notable inventions is a patent on self-aligned contacts. This invention relates to semiconductor structures and outlines methods for their manufacture. It includes designs featuring adjacent diffusion regions within a substrate, along with sidewall structures that align with these diffusion regions, culminating in effective electrical contacts. Another significant patent involves a memory device comprising a top via electrode. This device integrates insulating layers and conductive structures to improve the functionality of memory cells, thus paving the way for advancements in memory technology.

Career Highlights

Currently, Halting Wang is employed at Globalfoundries U.S. Inc., where he continues to drive innovation within the semiconductor sector. His work has not only led to fundamental advancements in semiconductor manufacturing but has also set new standards for reliability and performance in electronic devices.

Collaborations

Throughout his career, Wang has collaborated with talented coworkers, including Sipeng Gu and Jiehui Shu. Their combined expertise has fostered a dynamic environment of innovation, contributing to the success of various projects within the semiconductor sector.

Conclusion

In summary, Halting Wang's contributions to semiconductor technology through his multiple patents highlight his inventiveness and commitment to advancing the industry. His collaboration with esteemed colleagues further enhances the impact of his work at Globalfoundries U.S. Inc., establishing him as a prominent figure in the realm of semiconductor innovations.

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