The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Jan. 30, 2020
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Sipeng Gu, Clifton Park, NY (US);
Jiehui Shu, Dalian, CN;
Halting Wang, Clifton Park, NY (US);
Yanping Shen, Saratoga Springs, NY (US);
Assignee:
GLOBALFOUNDRIES U.S. INC., Malta, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41775 (2013.01); H01L 29/41791 (2013.01); H01L 29/7851 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to self-aligned contacts and methods of manufacture. The structure includes: adjacent diffusion regions located within a substrate material; sidewall structures above an upper surface of the substrate material, aligned on sides of the adjacent diffusion regions; and a contact between the sidewall structures and extending to within the substrate material between and in electrical contact with the adjacent diffusion regions.