The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
May. 19, 2020
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Rinus Tek Po Lee, Ballston Lake, NY (US);
Jiehui Shu, Dalian, CN;
Assignee:
GLOBALFOUNDRIES U.S. Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/02186 (2013.01); H01L 21/3205 (2013.01); H01L 21/823842 (2013.01); H01L 29/78696 (2013.01);
Abstract
A structure comprises a substrate and a first gate structure and a second gate structure in a dielectric layer over the substrate. The first and second gate structures having a width, the width of the first gate structure is shorter than the width of the second gate structure. The first gate structure comprises a first gate conductor layer and the second gate structure comprises a second gate conductor layer. The first gate conductor layer is made of a different metal from the second gate conductor layer.