The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Nov. 07, 2019
Applicant:
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Inventors:
Assignee:
GLOBALFOUNDRIES U.S. INC., Malta, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/823425 (2013.01); H01L 21/823468 (2013.01); H01L 27/088 (2013.01); H01L 29/42356 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to asymmetric source and drain structures and methods of manufacture. The structure includes: at least one gate structure; a straight spacer adjacent to the at least one gate structure; and an L-shaped spacer on a side of the at least one gate structure opposing the straight spacer, the L-shaped spacer extending a first diffusion region further away from the at least one gate structure than the straight spacer extends a second diffusion region on a second side away from the at least one gate structure.