Clifton Park, NY, United States of America

Baofu Zhu

This inventor holds 17 USPTO granted patents and 5 published patent applications, primarily in Semiconductor Devices. Top assignees: Globalfoundries U.S. Inc., Globalfoundries Inc.. Active years: 2014-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Baofu Zhu. Retrieved from https://idiyas.com/inventor/baofu-zhu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 17 (Patent Applications = 5)

% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 3

Forward Citations = 26(Granted Patents)

Location History:

Hillsboro, OR (US) (2021 - 2022)
Clifton Park, NY (US) (2014 - 2023)

Company Filing History:

10 out of 1,093

Globalfoundries U.S. Inc.

Years Active: 2014-2023

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Areas of Expertise:

Transistors

Epitaxial Materials

Source Drain Structures

Dual Trench Isolation

FinFET

Analog Devices

High-Voltage

N-Well Resistor

STI Structure

Sub-Fin Doping

Diffusion Blocking Layer

Semiconductor Technology

17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11563085 - Transistors with separately-formed source and drain (2023-01-24),

2. 11362178 - Asymmetric source drain structures (2022-06-14),

3. 11362177 - Epitaxial semiconductor material regions for transistor devices and methods of forming same (2022-06-14),

4. 11239366 - Transistors with an asymmetrical source and drain (2022-02-01),

5. 11239315 - Dual trench isolation structures (2022-02-01),

6. 11205699 - Epitaxial semiconductor material regions for transistor devices and methods of forming same (2021-12-21),

7. 11177385 - Transistors with a hybrid source or drain (2021-11-16),

8. 11094822 - Source/drain regions for transistor devices and methods of forming same (2021-08-17),

9. 11075268 - Transistors with separately-formed source and drain (2021-07-27),

10. 10985244 - N-well resistor (2021-04-20),

11. 10910276 - STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method (2021-02-02),

12. 10164099 - Device with diffusion blocking layer in source/drain region (2018-12-25),

13. 10020386 - High-voltage and analog bipolar devices (2018-07-10),

14. 10002793 - Sub-fin doping method (2018-06-19),

15. 9966313 - FinFET device and method of manufacturing (2018-05-08),

Title: Baofu Zhu: Pioneering Inventor from Clifton Park

Introduction: Baofu Zhu is a distinguished inventor hailing from Clifton Park, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Baofu Zhu holds several patents in the areas of artificial intelligence, renewable energy, and advanced robotics, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Baofu Zhu has worked with leading tech companies, research institutions, and universities, consistently pushing the boundaries of what is possible in the realm of technology.

Collaborations: Throughout his career, Baofu Zhu has collaborated with top engineers, scientists, and inventors from around the world, fostering a culture of innovation and knowledge-sharing in every project he undertakes.

Conclusion: Baofu Zhu's passion for innovation, coupled with his relentless drive to solve complex technological challenges, cements his legacy as a true pioneer in the world of inventions.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

5 patents pending: